2.5G 1310nm DFB chip
2.5G 1310nm DFB semiconductor laser chips utilize AlGaInAs materials, a multi-quantum well structure, and a ridge waveguide process. These single-mode edge-emitting laser chips feature low threshold, high bandwidth, and wide operating temperature, and are primarily used in GPON ONU products.
Technical attributes
Working temperature: -20-85℃
Threshold current: Typical value 10mA
Slope efficiency: >0.35mW/mA
Side mode suppression ratio: >35dB
application
Optical Ethernet
Fiber Optic Communications
GPON
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