2.5G 1270nm DFB chip
2.5G 1270nm DFB semiconductor laser chips utilize AlGaInAs materials, a multi-quantum well structure, and a ridge waveguide process. These single-mode edge-emitting laser chips feature low threshold, high bandwidth, and wide operating temperature, and are primarily used in 10G asymmetric PON networks.
Technical attributes
Working temperature: -20-85℃
Threshold current: Typical value 10mA
Slope efficiency: >0.35mW/mA
Side mode suppression ratio: >35dB
application
Optical Ethernet
Fiber Optic Communications
XGPON
Whatsapp
Email
Skype
